Gigabyte Aorus Gen4 5000E 2TBSSD AG450E2TB-G
Overview :
Level up your gaming experience
Built with a high-quality controller and high quality NAND flash, AORUS Gen4 5000E SSD delivers up to 6,500MB/s sequential read and 6,000MB/s sequential write performance. By utilizing Host Memory Buffer technology, the SSD controller can access the host DRAM without performance loss. As for features, AORUS Gen4 5000E SSD supports TRIM, SMART, and Over-Provision technologies to improve the reliability and durability of SSDs. AORUS Gen4 5000E SSD allows users to enjoy a smoother and faster gaming experience with more power efficiency.
+ PCIe 4.0 x4, NVMe 1.4 interface
+ Sequential Read Speed : up to 6,500MB/s**
+ Sequential Write speed : up to 6,000MB/s**
+ HMB (Host Memory Buffer) supported
+ TRIM & S.M.A.R.T supported
+ Energy-efficient
NAND Flash Selected for High Performance
Selected High Speed and high quality 3D NAND Flash
The ultra high speed 3D NAND Flash, are selected by critical criteria, combined with the AORUS Gen4 5000E SSD’s firmware optimizations, lead to superior performance.
Improve efficiency & responsiveness
Equipped with a robust combination of controller and new generation 3D NAND flash, AORUS Gen4 5000E SSD delivers blazing speeds: up to 6,500 MB/s for sequential read, and up to 6,000MB/s sequential write. Sequential Read performance of PCIe 4.0 SSDs is more than 1.8 times faster than PCIe 3.0 SSDs. AORUS Gen4 5000E SSD puts you in the computing fast lane.
Host Memory Buffer (HMB)
The Host Memory Buffer (HMB) feature utilizes the DMA (Direct Memory Access) of PCI Express to allow SSDs to use some of the DRAM on PC system, instead of requiring the SSD to bring its own DRAM.
Error Recovery Technology
The GIGABYTE exclusive technology uses special algorithm to enable Intelligent NAND Flash management, and enhance decoding capability. This optimize error recovery in NAND flash for superior storage reliability.
Media Scan
GIGABYTE exclusive Media Scan technology can automatically monitor the health status of NAND flash in the background and handle unhealthy flash blocks without disrupting regular operation.
Specification :
| Interface | PCI-Express 4.0×4, NVMe 1.4 |
| Form Factor | M.2 2280 |
| Total Capacity | 2000GB |
| NAND | 3D QLC NAND Flash |
| Sequential Read speed | Up to 6,500 MB/s |
| Sequential Write speed | Up to 6,000MB/s |
| Dimension | 80 x 22 x 2.3 mm |
| Mean time between failure (MTBF) | 1.5 million hours |
| Max. Operating Power | R : 6.2W W : 6.5W |
| Power Consumption(PS4, L1.2) | L1.2 < 5mW |
| Temperature (Operating) | 0°C to 70°C |
| Temperature (Storage) | -40°C to 85°C |
| Warranty | 5 Years |
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